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Photoluminescence and free carrier interactions in erbium-doped GaAs
1.Rare Earth Doped Semiconductors, Materials Research Society Symposium Proceedings 1993, edited by G. S. Pomrenke, P. B. Klein, and D. W. Langer (Materials Research Society, Pittsburgh, 1993), Vol. 301.
2.Rare Earth Doped Semiconductors II, Materials Research Society Symposium Proceedings 1996, edited by S. Coffa, A. Polman, and R. N. Schwartz (Materials Research Society, Pittsburgh, 1996), Vol. 422.
3.J. M. Redwing, D. C. Gordon, B. A. Vaartstra, S. S. Lau, and T. F. Kuech, J. Appl. Phys. 76, 1585 (1994).
4.T. D. Culp, U. Hömmerich, J. M. Redwing, T. F. Kuech, and K. L. Bray, J. Appl. Phys. 82, 368 (1997).
5.D. Pfeiffer, L. M. Liable-Sands, A. L. Rheingold, M. J. Heeg, and C. H. Winter (in preparation).
6.J. G. Cederberg, T. D. Culp, B. Beig, D. Pfeiffer, C. H. Winter, K. L. Bray, and T. F. Kuech, J. Appl. Phys. (submitted).
7.K. Takahei, R. A. Hogg, and A. Taguchi, Mater. Res. Soc. Symp. Proc. 422, 267 (1996).
8.K. Takahei, A. Taguchi, Y. Horikoshi, and J. Nakata, J. Appl. Phys. 76, 4332 (1994).
9.D. Haase, A. Dörnen, K. Takahei, and A. Taguchi, Mater. Res. Soc. Symp. Proc. 422, 179 (1996).
10.R. A. Hogg, K. Takahei, A. Taguchi, and Y. Horikoshi, Mater. Res. Soc. Symp. Proc. 422, 167 (1996).
11.K. Takahei and A. Taguchi, J. Appl. Phys. 77, 1735 (1995).
12.K. Takahei and A. Taguchi, J. Appl. Phys. 78, 5614 (1995).
13.H. Nakagome, K. Uwai, and K. Takahei, Appl. Phys. Lett. 53, 1726 (1988).
14.K. Takahei, A. Taguchi, H. Nakagome, K. Uwai, and P. S. Whitney, J. Appl. Phys. 66, 4941 (1989).
15.K. Thonke, K. Pressel, G. Bohnert, A. Stapor, J. Weber, M. Moser, A. Molassioti, A. Hangleiter, and F. Scholz, Semicond. Sci. Technol. 5, 1124 (1990).
16.K. Takarabe, T. Mizushima, S. Minomura, A. Taguchi, and K. Takahei, Mater. Sci. Forum 196–201, 645 (1995).
17.J. Michel, J. Palm, F. Gan, F. Y. G. Ren, B. Zheng, S. T. Dunham, and L. C. Kimerling, Mater. Sci. Forum 196–201, 585 (1995).
18.G. Franzo, F. Priolo, C. Spinella, and S. Coffa, J. Appl. Phys. 81, 2784 (1997).
19.T. Gregorkiewicz, I. Tsimperidis, C. A. J. Ammerlaan, F. P. Widdershoven, and N. A. Sobolev, Mater. Res. Soc. Symp. Proc. 422, 207 (1996).
20.J. M. Langer and L. Van Hong, J. Phys. C 17, L923 (1984).
21.J. M. Langer, J. Lumin. 40, 41, 589 (1988).
22.T. Benyattou, D. Seghier, G. Guillot, R. Moncorge, P. Galtier, and M. N. Charasse, Appl. Phys. Lett. 58, 2132 (1991).
23.X. M. Fang, Y. Li, and D. W. Langer, J. Appl. Phys. 74, 6990 (1993).
24.X. Z. Wang and B. W. Wessels, Mater. Sci. Forum 196–201, 657 (1995).
25.J. S. Blakemore, in Semiconductor Statistics (Dover, New York, 1987), Chap. 6.
26.P. T. Landsberg, in Recombination in Semiconductors (Cambridge University Press, Cambridge, 1991), Chap. 5.
27.An alternate approach would be to consider as the photogenerated carrier flux through the layer, rather than directly as the absorbed photon flux. An average magnitude of the carrier flux could then be calculated by averaging across the layer, where is proportional to the laser power and given by Eq. (9). However, it should be noted that the cross-section, will be different in each case, defined for excitation either based upon the incident photon flux or based upon the carrier flux across the layer. Using this alternate definition, is found to be is not affected by the definition of
28.Bimolecular recombination, where is proportional to is not expected to be dominant under the conditions of this experiment, where the photogenerated electron concentration is small See Ref. 25.
29.K. Mettler, Appl. Phys. 12, 75 (1977).
30.S. Gupta, S. Sethi, and P. K. Bhattacharya, Appl. Phys. Lett. 62, 1128 (1993). Lifetime estimate was roughly adjusted for temperature.
31.S. Adachi, in GaAs and Related Materials (World Scientific, London, 1994), Chap. 14.
32.Note that although it seems counterintuitive to what is observed in traditional one-beam PL experiments, the lifetime measured in this two-beam experiment will decrease at very low Ar laser powers even when Auger quenching of the excited ion is not included. In Eq. (4), can be seen to depend upon and the Ar laser power as well as
33.A. Taguchi and K. Takahei, J. Appl. Phys. 79, 4330 (1996).
34.A. Taguchi, H. Nakagome, and K. Takahei, Appl. Phys. Lett. 60, 965 (1992).
35.T. Gregorkiewicz, B. J. Heijmink Liesert, I. Tsimperidis, I. de Maat-Gersdorf, C. A. J. Ammerlaan, M. Godlewski, and F. Scholz, Mater. Res. Soc. Symp. Proc. 301, 239 (1993).
36.J. W. Huang, D. F. Gaines, T. F. Kuech, R. M. Potemski, and F. Cardone, J. Electron. Mater. 23, 659 (1994).
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