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Electrical and thermal transient during dielectric breakdown of thin oxides in metal--silicon capacitors
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10.1063/1.368050
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    Affiliations:
    1 Istituto Nazionale di Metodologie e Tecnologie per la Microelettronica (IMETEM), Consiglio Nazionale delle Ricerche, stradale Primosole, 50, I-95121 Catania, Italy
    2 Dipartimento di Fisica della Università, Unità INFM, corso Italia, 57, I-95129 Catania, Italy
    3 SGS-Thomson Microelectronics, stradale Primosole, 50, I-95121 Catania, Italy
    4 Dipartimento di Ingegneria dell’Informazione: Elettronica, Informatica, Telecomunicazioni, Università di Pisa, via Diotisalvi, 2, 1-56126 Pisa, Italy
    J. Appl. Phys. 84, 472 (1998); http://dx.doi.org/10.1063/1.368050
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/content/aip/journal/jap/84/1/10.1063/1.368050
1998-07-01
2014-08-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical and thermal transient during dielectric breakdown of thin oxides in metal-SiO2-silicon capacitors
http://aip.metastore.ingenta.com/content/aip/journal/jap/84/1/10.1063/1.368050
10.1063/1.368050
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