Measurement of the Hall scattering factor in 4H and 6H SiC epilayers from 40 to 290 K and in magnetic fields up to 9 T
1.A. Itoh, Ph.D. thesis, Kyoto University, 1995.
2.J. S. Blakemore, in Semiconductor Statistics (Dover, New York, 1997), p. 156.
3.G. Wellenhofer and U. Rössler, in Silicon Carbide, A Review of Fundamental Questions and Applications to Current Device Technology, edited by W. J. Choyke et al. (Akademie, Berlin, 1997), pp. 107–123;
3.Physica Status Solidi B 202 107 (1997).
4.P. Blood and J. W. Orton, in The Electrical Characterization of Semiconductors: Majority Carriers and Electron States (Academic, London, 1992), p. 120.
5.J. Appel, Z. Naturforsch. A 11, 689 (1956).
6.A. Schöner, IMC, Kista, Sweden (private communication).
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