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Bistable behavior of a medium-deep center related to EL5 and EL6 in n-type bulk GaAs
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10.1063/1.368514
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    Affiliations:
    1 Advanced Technology Research Laboratories, Central Research Institute, Mitsubishi Materials Corporation, 1-297 Kitabukuro-cho, Omiya, Saitama 330, Japan
    2 Department of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470-03, Japan
    3 Advanced Technology Research Laboratories, Central Research Institute, Mitsubishi Materials Corporation, 1-297 Kitabukuro-cho, Omiya, Saitama 330, Japan
    J. Appl. Phys. 84, 3167 (1998); http://dx.doi.org/10.1063/1.368514
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/content/aip/journal/jap/84/6/10.1063/1.368514
1998-09-15
2014-07-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Bistable behavior of a medium-deep center related to EL5 and EL6 in n-type bulk GaAs
http://aip.metastore.ingenta.com/content/aip/journal/jap/84/6/10.1063/1.368514
10.1063/1.368514
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