Index of content:
Volume 84, Issue 7, 01 October 1998
- GENERAL PHYSICS: NUCLEAR, ATOMIC, AND MOLECULAR (PACS 01-39)
Engineering the strain field for the control of quantum confinement: An analytical model for arbitrary shape nanostructures84(1998); http://dx.doi.org/10.1063/1.368517View Description Hide Description
We describe an analytical method to calculate the strain field and the corresponding band gap modulation induced in a quantum well by a surface stressor of arbitrary shape. In this way, it is possible to engineer the confinement potential of different strained nanostructures based on patterned heterojunctions. Band gap modulations up to 130–140 meV are predicted for suitably designed II–VI/III–V and III–V/III–V heterostructures.
84(1998); http://dx.doi.org/10.1063/1.368518View Description Hide Description
We report electron attachment measurements on ArF-excimer-laser irradiated obtained using an improved experimental technique that allows simultaneous measurements on multiple electron attaching species. Compared to a maximum electron attachment rate constant of for the ground electronic state of we measure an order of magnitude larger rate constant for the radical produced via laser photodissociation. However, the highly excited electronic states of produced by the laser irradiation have an associated electron attachment rate constant that is at least four orders of magnitude larger compared to the ground electronic state value. Implications of these findings for plasma processing discharges using are discussed.