Volume 85, Issue 10, 15 May 1999
Index of content:
Addendum: “Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment” [J. Appl. Phys. 79, 7148 (1996)]85(1999); http://dx.doi.org/10.1063/1.369385View Description Hide Description
Micro-Raman spectroscopy is often applied to measure local mechanical stress in siliconmicroelectronics devices. A procedure was proposed [De Wolf et al., J. Appl. Phys. 79, 7148 (1996)] for deriving quantitative information about the stress from the Raman spectra. The calculations were shown to be less tedious when performed in the reference system of the sample, as suggested by Anastassakis [Light Scattering in Semiconductor Structures and Superlattices, (Plenum, New York, 1991), p. 173]. However, there are a few errors in some equations in De Wolf et al. We give here the correct equations, and discuss the consequences of the errors. An alternative convenient approach is recommended.