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Type II and mixed type I–II radiative recombinations in AlInAs–InP heterostructures
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10.1063/1.369517
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    Affiliations:
    1 Institut d’Electronique et de Microélectronique du Nord, UMR CNRS 9929, Université des Sciences et Technologies de Lille, Avenue Poincaré, BP 69, 59652 Villeneuve d’Ascq Cedex, France
    2 Laboratoire de Structure et Propriétés de l’Etat Solide, URA 234 CNRS, Université des Sciences et Technologies de Lille, 59655 Villeneuve d’Ascq Cedex, France
    3 Institut d’Electronique et de Microélectronique du Nord, UMR CNRS 9929, Université des Sciences et Technologies de Lille, Avenue Poincaré, BP 69, 59652 Villeneuve d’Ascq Cedex, France
    J. Appl. Phys. 85, 2202 (1999); http://dx.doi.org/10.1063/1.369517
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/content/aip/journal/jap/85/4/10.1063/1.369517
1999-02-15
2014-10-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Type II and mixed type I–II radiative recombinations in AlInAs–InP heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/jap/85/4/10.1063/1.369517
10.1063/1.369517
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