Electronic structures and phonon-limited electron mobility of double-gate silicon-on-insulator Si inversion layers
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26.For example, the form factor for the intrasubband scattering of electrons in the ith even parity subband in a DG SOI inversion layer is half of that for the intrasubband scattering of the corresponding ith subband in the corresponding bulk Si inversion layer . However, for the DG SOI inversion layer, the form factor of the intersubband scattering between the ith even and odd subbands also has the same value . Consequently, the scattering rate concerning these even and odd subbands (intersubband and intrasubband) for electrons in this even subband of the DG SOI inversion layer is equal to the intrasubband scattering rate for electrons in the corresponding subband in the bulk Si inversion layer. Similar equality of scattering rates can also be obtained for other intersubband scatterings. As a result, the scattering rate of electrons in a subband of a symmetric DG SOI inversion layer is almost equal to that of electrons in the corresponding subband in the corresponding bulk Si inversion layer when the potential barrier is so high for the subband that the overlap of the corresponding bulk Si subband wave functions is sufficiently small.
27.We would like to note an important point concerning the numerical calculation for electronic structures and the mobility. For rather thick and/or high symmetric DG SOI inversion layers, since the barrier between upper and lower inversion regions is high, a slight asymmetry of the potential causes wave functions localized at upper or lower surfaces of the SOI Si layer. In such cases, a high accuracy on the self-consistent calculation is required in order to obtain even and odd parity wave functions. However, such asymmetry of wave functions hardly affect the mobility. The reason is essentially the same as that for the equivalence of the mobility between a symmetric DG SOI inversion layer with rather thick and the corresponding bulk Si inversion layer.
28.The form factor is inversely proportional to a degree of the spatial extent of .
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