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Dependence of tunneling magnetoresistance on ferromagnetic electrode thickness and on the thickness of a Cu layer inserted at the interface
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10.1063/1.369849
/content/aip/journal/jap/85/8/10.1063/1.369849
http://aip.metastore.ingenta.com/content/aip/journal/jap/85/8/10.1063/1.369849
/content/aip/journal/jap/85/8/10.1063/1.369849
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/content/aip/journal/jap/85/8/10.1063/1.369849
1999-04-15
2014-10-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dependence of tunneling magnetoresistance on ferromagnetic electrode thickness and on the thickness of a Cu layer inserted at the Al2O3/CoFe interface
http://aip.metastore.ingenta.com/content/aip/journal/jap/85/8/10.1063/1.369849
10.1063/1.369849
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