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Enhanced hydrogen desorption from Si sites during low-temperature growth by disilane and solid-Ge molecular beam epitaxy
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10.1063/1.370106
/content/aip/journal/jap/85/9/10.1063/1.370106
http://aip.metastore.ingenta.com/content/aip/journal/jap/85/9/10.1063/1.370106
/content/aip/journal/jap/85/9/10.1063/1.370106
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/content/aip/journal/jap/85/9/10.1063/1.370106
1999-05-01
2014-12-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced hydrogen desorption from Si sites during low-temperature Si1−xGex growth by disilane and solid-Ge molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/jap/85/9/10.1063/1.370106
10.1063/1.370106
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