Full text loading...
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Analysis of the stretched exponential photoluminescence decay from nanometer-sized silicon crystals in
1.For a review see: A. G. Cullis, L. T. Canham, and P. D. J. Calcott, J. Appl. Phys. 82, 909 (1997).
2.L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
3.V. Lehmann and U. Gösele, Appl. Phys. Lett. 58, 856 (1991).
4.M. S. Hybertsen, Phys. Rev. Lett. 72, 1514 (1994).
5.For recent articles see Proceedings of E-MRS, Light emission from silicon: progress towards Si-based optoelectronics, J. Lumin. 80 (1999).
6.N. A. Hill and K. B. Whaley, J. Electron. Mater. 25, 269 (1996);
6.N. A. Hill and K. B. Whaley, Phys. Rev. Lett. 75, 1130 (1995).
7.M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, Phys. Rev. Lett. 82, 197 (1999).
8.T. Shimizu-Iwayama, S. Nakao, and K. Saitoh, Appl. Phys. Lett. 65, 1814 (1994).
9.P. Mutti, G. Ghislotti, S. Bertoni, L. Bonoldi, G. F. Cerofolini, L. Meda, E. Grilli, and M. Guzzi, Appl. Phys. Lett. 66, 851 (1995).
10.J. G. Zhu, C. W. White, J. D. Budai, S. P. Withrow, and Y. Chen, Mater. Res. Soc. Symp. Proc. 358, 175 (1995);
10.H. M. Cheong, W. Paul, S. P. Withrow, J. G. Zhu, J. D. Budai, C. W. White, and D. M. Hembree, Appl. Phys. Lett. 68, 87 (1996).
11.T. Komoda, J. P. Kelly, A. Nejim, K. P. Homewood, P. L. F. Hemment, and B. J. Sealy, Mater. Res. Soc. Symp. Proc. 358, 163 (1995).
12.G. Ghislotti, B. Nielsen, P. Asoka-Kumar, K.G. Lynn, A. Gambhir, L. F. Di Mauro, and C. E. Bottani, J. Appl. Phys. 79, 8660 (1996).
13.K. S. Min, K.V. Shcheglov, C. M. Yang, H. A. Atwater, M. L. Brongersma, and A. Polman, Appl. Phys. Lett. 69, 2033 (1996).
14.L.-S. Liao, X.-M. Bao, X.-Q. Zheng, N.-S. Li, and N.-B. Min, Appl. Phys. Lett. 68, 850 (1996).
15.J. Linnros, A. Galeckas, N. Lalic, and V. Grivickas, Thin Solid Films 297, 167 (1997).
16.S. Guha, M. D. Pace, D. N. Dunn, and I. L. Singer, Appl. Phys. Lett. 70, 1207 (1997).
17.H. Z. Song and X. M. Bao, Phys. Rev. B 55, 6988 (1997).
18.Q. Zhang, S. C. Bayliss, and D. A. Hutt, Appl. Phys. Lett. 66, 1977 (1995).
19.S. Hayashi, T. Nagareda, Y. Kanzawa, and K. Yamamoto, Jpn. J. Appl. Phys., Part 1 32, 3840 (1993);
19.Y. Kanzawa, T. Kageyama, S. Takeoka, M. Fujii, S. Hayashi, and K. Yamamoto, Solid State Commun. 102, 533 (1997).
20.Y. Kanemitsu, Phys. Rev. B 53, 13515 (1996).
21.D. J. DiMaria, J. R. Kirtley, E. J. Pakulis, D. W. Dong, T. S. Kuan, F. L. Pesavento, T. N. Theis, J. A. Cutro, and S. D. Brorson, J. Appl. Phys. 56, 401 (1984).
22.L. Pavesi, J. Appl. Phys. 80, 1 (1996).
23.I. Mihalcescu, J. C. Vial, and R. Romestain, Phys. Rev. Lett. 80, 3392 (1998).
24.J. Linnros, in Proceedings of the International School of Physics ’Enrico Fermi’ 1998, edited by O. Bisi, S. U. Campisano, L. Pavesi, and F. Priolo (IOS Press, Amsterdam, 1999), p. 47.
25.L. Pavesi and M. Ceschini, Phys. Rev. B B48, 17 625 (1993).
26.G. Mauckner, K. Thonke, T. Baier, T. Walter, and R. Sauer, J. Appl. Phys. 75, 4167 (1994).
27.P. J. Ventura, M. C. do Carmo, and K. P. O’Donnell, J. Appl. Phys. 77, 323 (1995).
28.H. E. Roman and L. Pavesi, J. Phys.: Condens. Matter 8, 5161 (1996).
29.In a few cases the derivative of Eq. (1) was also introduced for fitting of the decay.
30.Using the free carrier absorption technique, indeed, it was demonstrated that the total free carrier (i.e. excited carriers) concentration scales essentially linearly with the wavelength-integrated PL yield in porous Si, see: V. Grivickas and J. Linnros, Mater. Res. Soc. Symp. Proc. 358, 543 (1995);
30.V. Grivickas and J. Linnros, Thin Solid Films 255, 70 (1995).
31.I. Mihalcescu, J. C. Vial, and R. Romestain, J. Appl. Phys. 80, 2404 (1996).
32.The interconnected network of porous Si, indeed, fulfills the requirements of such a system where potential barriers between nanocrystals form migration barriers and larger crystals, with correspondingly smaller effective band gap, serve as temporary traps.
33.C. Delerue (private communication);
33.E. Martin, C. Delerue, G. Allan, and M. Lannoo, Phys. Rev. B 50, 18 258 (1994).
34.To obtain high implant doses the Si isotope was used and contamination from other molecules with the same mass/charge ratio cannot be excluded.
35.J. P. Biersack and L. J. Haggmark, Nucl. Instrum. Methods 174, 257 (1980).
36.In the calculations progressive erosion of the sample by sputtering was not taken into account. For a sputtering coefficient of ∼0.5 (H. Jacobsson, PhD thesis, Bibliotekets Reproservice, Göteborg, 1993) a 200 Å loss of material would be expected at maximum dose leading to a slightly modified depth distribution.
37.S. Schuppler et al. Phys. Rev. Lett. 72, 2648 (1994).
38.J. Linnros, A. Galeckas, A. Pareaud, N. Lalic, V. Grivickas, and L. Hultman, Mater. Res. Soc. Symp. Proc. 486, 249 (1998).
39.The higher yields of the samples implanted at 37 keV, compared to those implanted at 40 keV, is most likely related to a higher peak atomic concentration combined with a PL saturation at high doses.
40.A further reason for the increased lifetime might be that the system of nanocrystals has fewer interconnecting pathways, effectively reducing the diffusion of excitons.
41.L. A. Nesbit, Appl. Phys. Lett. 46, 38 (1985).
42.At the high annealing temperatures used one would not expect different crystal shapes as free energy considerations would favor a particular shape, e.g., spherical nanocrystals.
43.The concept of migrating excitons finds additional support by a recent observation (unpublished) of a decreased PL lifetime for nanocrystals embedded in a matrix in proximity to a silicon layer.
Article metrics loading...