Volume 86, Issue 11, 01 December 1999
Index of content:
- PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)
86(1999); http://dx.doi.org/10.1063/1.371637View Description Hide Description
The development of a Tersoff-type empirical interatomic potential energy function (PEF) for the Si–C–F system is reported. As a first application of this potential, etching of a:Si by using molecular dynamics (MD) simulations is demonstrated. Aspects of ion bombardment through a fluence of are discussed, including overlayer composition and thickness, Si etch yields, and etch product distributions. The formation of a 1-nm-thick steady-state overlayer occurs in the simulation, and this layer is an active participant in the etching of the underlying Si. At an ion energy of 100 eV, a steady state the etch yield of Si is predicted to be 0.06±0.01 Si/ion. A comparison of the simulation findings and experimental results from the literature leads to the conclusion that the new PEF performs well in qualitatively modeling the atomic-scale processes involved in ion beametching of Si. Simulations of this kind yield insight into fluorocarbon etch mechanisms, and ultimately will result in phenomenological models of etching by fluorocarbon plasmas.