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Fermi-level pinning and Schottky barrier heights on epitaxially grown fully strained and partially relaxed n-type layers
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10.1063/1.371768
/content/aip/journal/jap/86/12/10.1063/1.371768
http://aip.metastore.ingenta.com/content/aip/journal/jap/86/12/10.1063/1.371768
/content/aip/journal/jap/86/12/10.1063/1.371768
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/content/aip/journal/jap/86/12/10.1063/1.371768
1999-12-15
2014-11-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fermi-level pinning and Schottky barrier heights on epitaxially grown fully strained and partially relaxed n-type Si1−xGex layers
http://aip.metastore.ingenta.com/content/aip/journal/jap/86/12/10.1063/1.371768
10.1063/1.371768
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