Volume 86, Issue 2, 15 July 1999
Index of content:
86(1999); http://dx.doi.org/10.1063/1.370860View Description Hide Description
We compare the local crystallographic orientations associated with stress voids in Al–1Si–0.5Cu (wt %) with those in pure copper interconnects. Orientations were sorted by whether grains were immediately adjacent to voids. Grains adjacent to voids in Al–Si–Cu showed a 〈111〉 fiber texture that was slightly stronger than those in intact regions. This is in contrast to copper, which showed weaker local 〈111〉 texture around voids. We postulate the difference to be due to the relative effectiveness of the diffusion paths available in the lines. For Al–Si–Cu, the presence of defects associated with precipitates may allow more rapid diffusion than grain boundaries. Voiding in copper, which is free from such defects, depends more on grain boundary structure.
86(1999); http://dx.doi.org/10.1063/1.370861View Description Hide Description
Photoemission data for the dependence of the Schottky barrier height on the metal work function, for n-type wurtzite GaN, are discussed in terms of the Cowley–Sze model [J. Appl. Phys. 36, 3212 (1965)] for a uniform density of surface states in the band gap. It is suggested that, in the context of this model, such barrier heights can be expressed largely as a sum of the “bare-surface barrier height” (i.e., the band bending before contact formation) and a Mott–Schottky term.