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Growth of undulating layers for photodetectors at λ=1.55 μm
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10.1063/1.370883
/content/aip/journal/jap/86/3/10.1063/1.370883
http://aip.metastore.ingenta.com/content/aip/journal/jap/86/3/10.1063/1.370883
/content/aip/journal/jap/86/3/10.1063/1.370883
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/content/aip/journal/jap/86/3/10.1063/1.370883
1999-08-01
2015-03-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth of undulating Si0.5Ge0.5 layers for photodetectors at λ=1.55 μm
http://aip.metastore.ingenta.com/content/aip/journal/jap/86/3/10.1063/1.370883
10.1063/1.370883
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