1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Defects in GaAs grown by molecular-beam epitaxy at low temperatures: stoichiometry, doping, and deactivation of n-type conductivity
Rent:
Rent this article for
USD
10.1063/1.370984
/content/aip/journal/jap/86/4/10.1063/1.370984
http://aip.metastore.ingenta.com/content/aip/journal/jap/86/4/10.1063/1.370984
/content/aip/journal/jap/86/4/10.1063/1.370984
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/jap/86/4/10.1063/1.370984
1999-08-15
2014-09-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Defects in GaAs grown by molecular-beam epitaxy at low temperatures: stoichiometry, doping, and deactivation of n-type conductivity
http://aip.metastore.ingenta.com/content/aip/journal/jap/86/4/10.1063/1.370984
10.1063/1.370984
SEARCH_EXPAND_ITEM