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Material gain of bulk 1.55 μm InGaAsP/InP semiconductor optical amplifiers approximated by a polynomial model
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10.1063/1.371909
/content/aip/journal/jap/87/1/10.1063/1.371909
http://aip.metastore.ingenta.com/content/aip/journal/jap/87/1/10.1063/1.371909
/content/aip/journal/jap/87/1/10.1063/1.371909
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/content/aip/journal/jap/87/1/10.1063/1.371909
2000-01-01
2015-07-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Material gain of bulk 1.55 μm InGaAsP/InP semiconductor optical amplifiers approximated by a polynomial model
http://aip.metastore.ingenta.com/content/aip/journal/jap/87/1/10.1063/1.371909
10.1063/1.371909
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