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Electrical and optical properties of Si-doped InP grown by solid source molecular beam epitaxy using a valved phosphorus cracker cell
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10.1063/1.373484
/content/aip/journal/jap/87/11/10.1063/1.373484
http://aip.metastore.ingenta.com/content/aip/journal/jap/87/11/10.1063/1.373484
/content/aip/journal/jap/87/11/10.1063/1.373484
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/content/aip/journal/jap/87/11/10.1063/1.373484
2000-06-01
2014-12-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical and optical properties of Si-doped InP grown by solid source molecular beam epitaxy using a valved phosphorus cracker cell
http://aip.metastore.ingenta.com/content/aip/journal/jap/87/11/10.1063/1.373484
10.1063/1.373484
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