Volume 87, Issue 12, 15 June 2000
Index of content:
87(2000); http://dx.doi.org/10.1063/1.373612View Description Hide Description
Room-temperature electroluminescence corresponding to Si band gapenergy from metal–oxide–semiconductor structures on both p-type and n-type Si is observed. With very thin oxide grown by rapid thermal oxidation, the metal–oxide–semiconductor structures behave like light emitting diodes.Luminescence is observed under forward bias even with a current density as low as 0.67 A/cm2. The physical reason for the electroluminescence is discussed and attributed to the localized wave function that leads to the spread of momentum. As a result, the spread momentum causes the electron–hole radiative recombination to occur relatively easily.