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Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
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10.1063/1.372154
/content/aip/journal/jap/87/5/10.1063/1.372154
http://aip.metastore.ingenta.com/content/aip/journal/jap/87/5/10.1063/1.372154
/content/aip/journal/jap/87/5/10.1063/1.372154
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/content/aip/journal/jap/87/5/10.1063/1.372154
2000-03-01
2014-10-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
http://aip.metastore.ingenta.com/content/aip/journal/jap/87/5/10.1063/1.372154
10.1063/1.372154
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