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High-quality Si-implanted epitaxial layers and their application to junction devices
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10.1063/1.372369
/content/aip/journal/jap/87/7/10.1063/1.372369
http://aip.metastore.ingenta.com/content/aip/journal/jap/87/7/10.1063/1.372369
/content/aip/journal/jap/87/7/10.1063/1.372369
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/content/aip/journal/jap/87/7/10.1063/1.372369
2000-04-01
2014-09-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n+p junction devices
http://aip.metastore.ingenta.com/content/aip/journal/jap/87/7/10.1063/1.372369
10.1063/1.372369
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