Index of content:
Volume 88, Issue 1, 01 July 2000
- DEVICE PHYSICS (PACS 85)
Calculation of theoretical capacitance–voltage characteristics of 6H–SiC metal–oxide–semiconductor structures88(2000); http://dx.doi.org/10.1063/1.373676View Description Hide Description
The effect of nonuniform interface trap distributions on capacitance–voltage characteristics of 6H–silicon carbide metal–oxide–semiconductor (MOS)capacitors has been investigated. Theoretical curves have been calculated in order to study the influence of: (i) the nature (donor or acceptor) of the traps, (ii) the interface state density peak in the band gap and the peak magnitude. The incomplete ionization of dopants and the depletion in the polysilicon gate have also been taken into account to fit experimental data. A good agreement is observed between the interface state spectrum obtained in our calculation and the one obtained by the Terman’s method. Thus, exact parameters of the MOSstructures can be obtained. A peak of donor states is detected at and an effective oxide charge is measured to which denotes a poor interface quality.
Compositional, structural, and electrical characterization of plasma oxidized thin aluminum layers for spin-tunnel junctions88(2000); http://dx.doi.org/10.1063/1.373677View Description Hide Description
In this paper we present results on how the plasmaoxidation of a thin (1.5 nm) Al layer proceeds. Transmission electron microscopy of a Co/Al–oxide multilayer was used to determine the thickness of the oxides and Rutherford backscattering spectrometry and elastic recoil detection were utilized in order to determine the oxygen content. The oxide was also characterized via ac impedance measurements. These measurements indicated that the oxidation of Al on Co occurs in three discrete steps.