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High-energy ion-implantation-induced gettering of copper in silicon beyond the projected ion range: The trans-projected-range effect
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10.1063/1.1316054
/content/aip/journal/jap/88/10/10.1063/1.1316054
http://aip.metastore.ingenta.com/content/aip/journal/jap/88/10/10.1063/1.1316054
/content/aip/journal/jap/88/10/10.1063/1.1316054
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/content/aip/journal/jap/88/10/10.1063/1.1316054
2000-11-15
2014-07-29
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-energy ion-implantation-induced gettering of copper in silicon beyond the projected ion range: The trans-projected-range effect
http://aip.metastore.ingenta.com/content/aip/journal/jap/88/10/10.1063/1.1316054
10.1063/1.1316054
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