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Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopy
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10.1063/1.373818
/content/aip/journal/jap/88/3/10.1063/1.373818
http://aip.metastore.ingenta.com/content/aip/journal/jap/88/3/10.1063/1.373818
/content/aip/journal/jap/88/3/10.1063/1.373818
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/content/aip/journal/jap/88/3/10.1063/1.373818
2000-08-01
2015-08-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation of threading dislocation blocking in strained-layer InGaAs/GaAs heterostructures using scanning cathodoluminescence microscopy
http://aip.metastore.ingenta.com/content/aip/journal/jap/88/3/10.1063/1.373818
10.1063/1.373818
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