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Chemical vapor deposition of undoped and in-situ boron- and arsenic-doped epitaxial and polycrystalline silicon films grown using silane at reduced pressure
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10.1063/1.373867
/content/aip/journal/jap/88/3/10.1063/1.373867
http://aip.metastore.ingenta.com/content/aip/journal/jap/88/3/10.1063/1.373867
/content/aip/journal/jap/88/3/10.1063/1.373867
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/content/aip/journal/jap/88/3/10.1063/1.373867
2000-08-01
2014-09-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Chemical vapor deposition of undoped and in-situ boron- and arsenic-doped epitaxial and polycrystalline silicon films grown using silane at reduced pressure
http://aip.metastore.ingenta.com/content/aip/journal/jap/88/3/10.1063/1.373867
10.1063/1.373867
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