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Strain development and damage accumulation during neon ion implantation into silicon at elevated temperatures
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10.1063/1.1305928
/content/aip/journal/jap/88/4/10.1063/1.1305928
http://aip.metastore.ingenta.com/content/aip/journal/jap/88/4/10.1063/1.1305928
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/content/aip/journal/jap/88/4/10.1063/1.1305928
2000-08-15
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strain development and damage accumulation during neon ion implantation into silicon at elevated temperatures
http://aip.metastore.ingenta.com/content/aip/journal/jap/88/4/10.1063/1.1305928
10.1063/1.1305928
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