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Raman scattering study of GaAs crystalline layers grown by molecular beam epitaxy at low temperature
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10.1063/1.1290263
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    Affiliations:
    1 School of Materials Science, Japan Advanced Institute of Science and Technology, Tatsunokuchi, Ishikawa 923-1292, Japan
    2 School of Materials Science, Japan Advanced Institute of Science and Technology, Tatsunokuchi, Ishikawa 923-1292, Japan
    3 Fields and Reactions,” PRESTO, Japan Science and Technology Corporation, 4-1-8 Kawaguchishi-Honmachi, Saitama 332-0012, Japan
    4 School of Materials Science, Japan Advanced Institute of Science and Technology, Tatsunokuchi, Ishikawa 923-1292, Japan
    J. Appl. Phys. 88, 3948 (2000); http://dx.doi.org/10.1063/1.1290263
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/content/aip/journal/jap/88/7/10.1063/1.1290263
2000-10-01
2014-09-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Raman scattering study of GaAs crystalline layers grown by molecular beam epitaxy at low temperature
http://aip.metastore.ingenta.com/content/aip/journal/jap/88/7/10.1063/1.1290263
10.1063/1.1290263
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