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A comparison of impurity-free and ion-implantation-induced intermixing of InGaAs/InP quantum wells
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10.1063/1.1314904
/content/aip/journal/jap/88/9/10.1063/1.1314904
http://aip.metastore.ingenta.com/content/aip/journal/jap/88/9/10.1063/1.1314904
/content/aip/journal/jap/88/9/10.1063/1.1314904
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/content/aip/journal/jap/88/9/10.1063/1.1314904
2000-11-01
2014-12-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A comparison of impurity-free and ion-implantation-induced intermixing of InGaAs/InP quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/jap/88/9/10.1063/1.1314904
10.1063/1.1314904
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