Volume 89, Issue 3, 01 February 2001
Index of content:
89(2001); http://dx.doi.org/10.1063/1.1338983View Description Hide Description
The epitaxial regrowth of the implantation-induced amorphous layer in - and -oriented 6H-SiC has been investigated at annealing temperatures below 800 °C using Rutherford backscattering spectrometry and transmission electron microscopy. The surface region of sample is amorphized by the ion implantation with an energy of 100 keV at a dose of The implantation-induced amorphous layer epitaxially regrows at annealing temperatures above 700 °C without the inclusion of other polytype crystals such as 3C-SiC and twinned defects. The regrowth rate is estimated to be about 0.4 nm/min at 700 °C and is proportional to the annealing temperature with an activation energy of about 3.4 eV for both - and -oriented 6H-SiC.
89(2001); http://dx.doi.org/10.1063/1.1287235View Description Hide Description
In order to fabricate intrinsic junctions in p-type ZnTe substrates for realizing pure-green light-emitting diodes, Al was used as the diffusion species. We found that the Al diffusion region is observed as a dark region image by scanning electron microscopy. Al was diffused over a wide range of annealing temperatures and times. It was found that the activation energies of Al diffusion into p-type ZnTe substrates were and the diffusion coefficient was given by
89(2001); http://dx.doi.org/10.1063/1.1333716View Description Hide Description
This communication corrects an error in the value previously reported by one of the authors for the electron affinity (EA) of AlN. A brief discussion is given of the potential errors in photoemission measurements of EA which affect this and other studies. Finally, a recommendation is given for 1.9 eV as the “true” EA of wurtzite AlN.
89(2001); http://dx.doi.org/10.1063/1.1338512View Description Hide Description
Properties of the buried silicon oxide layer in Si–Si bonded wafers upon annealing were studied using Infrared (IR) spectroscopy and high resolution transmission electron microscopy(HRTEM). IR spectra of chemically etched Si–Si bonded wafers allow the thickness of the buried oxide layers to be evaluated. The increasing thickness of the buried oxide layer with annealing temperature is determined via a curve fitting procedure of IR spectra measured in the spectral range of longitudinal optical and transversal optical phonons in silicon oxide. The behavior observed is in very good agreement with that obtained from HRTEM measurements.