Index of content:
Volume 89, Issue 5, 01 March 2001
- DEVICE PHYSICS (PACS 85)
89(2001); http://dx.doi.org/10.1063/1.1341208View Description Hide Description
The interdiffusion of a single quantum wellheterostructure subjected to thermal annealing in a nitriding ambient was investigated as a function of anneal temperature and time. Nitridation of the silicon surface alters equilibrium vacancypoint defect populations throughout the structure, which allows the determination of the point defect species important in interdiffusion.Diffusion coefficients of Ge after nitridation of for and for were extracted. The extent of diffusion in a nitriding ambient was much less than in an inert ambient, which indicates minimal vacancy contribution to interdiffusion. This is in contrast to results from previously published studies performed in an oxidizing ambient.
89(2001); http://dx.doi.org/10.1063/1.1344912View Description Hide Description
Resonantcavitylight emitting diodes containing two single quantum wells of different well width were fabricated. The quantum wells, consisting of GaAs with AlGaAs barriers, were placed in separate antinodes of the optical emission mode in a Fabry–Perot cavity whose optical length is twice that of the resonant wavelength. For low forward bias currents, the emission from the wider quantum well is resonant with the cavity. For larger forward bias currents, the emission shifts to longer wavelengths due to an increase in the device temperature. The narrower single quantum well then becomes resonant with the cavity. Using the double quantum well structure, high output powers and high directivity are obtained for a wide range of forward bias current.