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Growth and characterization of GaAs epitaxial layers on Si/porous Si/Si substrate by chemical beam epitaxy
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10.1063/1.1362339
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    Affiliations:
    1 Research Center for Micro-Structure Devices, Nagoya Institute of Technology, Gokisho-cho, Showa-ku, Nagoya 466 8555, Japan
    2 Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokisho-cho, Showa-ku, Nagoya 466 8555, Japan
    3 Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokisho-cho, Showa-ku, Nagoya 466 8555, Japan
    4 Canon Inc., 6770 Tamura, Hiratsuka, Kanagawa 254-0013, Japan
    J. Appl. Phys. 89, 5215 (2001); http://dx.doi.org/10.1063/1.1362339
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/content/aip/journal/jap/89/9/10.1063/1.1362339
2001-05-01
2014-08-22
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Scitation: Growth and characterization of GaAs epitaxial layers on Si/porous Si/Si substrate by chemical beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/jap/89/9/10.1063/1.1362339
10.1063/1.1362339
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