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and as high-k gate dielectrics on SiGe: A comparative study
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10.1063/1.1405134
/content/aip/journal/jap/90/8/10.1063/1.1405134
http://aip.metastore.ingenta.com/content/aip/journal/jap/90/8/10.1063/1.1405134
/content/aip/journal/jap/90/8/10.1063/1.1405134
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/content/aip/journal/jap/90/8/10.1063/1.1405134
2001-10-15
2014-12-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Gd2O3,Ga2O3(Gd2O3),Y2O3, and Ga2O3, as high-k gate dielectrics on SiGe: A comparative study
http://aip.metastore.ingenta.com/content/aip/journal/jap/90/8/10.1063/1.1405134
10.1063/1.1405134
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