Volume 91, Issue 11, 01 June 2002
Index of content:
- DEVICE PHYSICS (PACS 85)
91(2002); http://dx.doi.org/10.1063/1.1468257View Description Hide Description
We present an experimental and theoretical study of nonresonant detection of subterahertz radiation in GaAs/AlGaAs and GaN/AlGaN heterostructurefield effect transistors. The experiments were performed in a wide range of temperatures (8–300 K) and for frequencies ranging from 100 to 600 GHz. The photoresponse measured as a function of the gate voltage exhibited a maximum near the threshold voltage. The results were interpreted using a theoretical model that shows that the maximum in photoresponse can be explained by the combined effect of exponential decrease of the electron density and the gate leakage current.