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Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces
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10.1063/1.1424060
/content/aip/journal/jap/91/2/10.1063/1.1424060
http://aip.metastore.ingenta.com/content/aip/journal/jap/91/2/10.1063/1.1424060
/content/aip/journal/jap/91/2/10.1063/1.1424060
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/content/aip/journal/jap/91/2/10.1063/1.1424060
2002-01-15
2014-12-28
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces
http://aip.metastore.ingenta.com/content/aip/journal/jap/91/2/10.1063/1.1424060
10.1063/1.1424060
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