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Quantitative evaluation of biaxial strain in epitaxial -SiC layers on Si(100) substrates by Raman spectroscopy
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10.1063/1.1427408
/content/aip/journal/jap/91/3/10.1063/1.1427408
http://aip.metastore.ingenta.com/content/aip/journal/jap/91/3/10.1063/1.1427408
/content/aip/journal/jap/91/3/10.1063/1.1427408
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/content/aip/journal/jap/91/3/10.1063/1.1427408
2002-02-01
2014-07-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Quantitative evaluation of biaxial strain in epitaxial 3C-SiC layers on Si(100) substrates by Raman spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/jap/91/3/10.1063/1.1427408
10.1063/1.1427408
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