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Positron-annihilation study of compensation defects in InP
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10.1063/1.1428796
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    Affiliations:
    1 Department of Physics, The University of Hong Kong, People’s Republic of China
    2 Department of Applied Physics, Sichuan University, Sichuan, People’s Republic of China
    3 Department of Physics, The University of Hong Kong, Hong Kong, People’s Republic of China
    4 Material Science Centre, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People’s Republic of China
    5 Hebei Semiconductor Research Institute, P.O. Box 179, Shijiazhuang, People’s Republic of China
    J. Appl. Phys. 91, 1998 (2002); http://dx.doi.org/10.1063/1.1428796
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/content/aip/journal/jap/91/4/10.1063/1.1428796
2002-02-15
2014-10-02
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Scitation: Positron-annihilation study of compensation defects in InP
http://aip.metastore.ingenta.com/content/aip/journal/jap/91/4/10.1063/1.1428796
10.1063/1.1428796
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