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Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent layers on Si(001)
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10.1063/1.1448680
/content/aip/journal/jap/91/6/10.1063/1.1448680
http://aip.metastore.ingenta.com/content/aip/journal/jap/91/6/10.1063/1.1448680
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/content/aip/journal/jap/91/6/10.1063/1.1448680
2002-03-15
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent Si0.7Ge0.3 layers on Si(001)
http://aip.metastore.ingenta.com/content/aip/journal/jap/91/6/10.1063/1.1448680
10.1063/1.1448680
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