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Investigation into the charge distribution and barrier profile tailoring in AlGaN/GaN double heterostructures by self-consistent Poisson–Schrödinger calculations and capacitance–voltage profiling
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10.1063/1.1459604
/content/aip/journal/jap/91/7/10.1063/1.1459604
http://aip.metastore.ingenta.com/content/aip/journal/jap/91/7/10.1063/1.1459604
/content/aip/journal/jap/91/7/10.1063/1.1459604
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/content/aip/journal/jap/91/7/10.1063/1.1459604
2002-03-28
2014-12-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation into the charge distribution and barrier profile tailoring in AlGaN/GaN double heterostructures by self-consistent Poisson–Schrödinger calculations and capacitance–voltage profiling
http://aip.metastore.ingenta.com/content/aip/journal/jap/91/7/10.1063/1.1459604
10.1063/1.1459604
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