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Effect of growth temperature on strain barrier for metalorganic vapor phase epitaxy grown strained InGaAs quantum well with lattice matched InGaAsP barriers
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10.1063/1.1464210
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    Affiliations:
    1 Semiconductor Laser Section, Laser Physics Division, Research and Development Block-A, Centre for Advanced Technology, Indore-452 013 (M.P), India
    2 SSE Group, Tata Institute of Fundamental Research, Mumbai-400 005, India
    3 Semiconductor Laser Section, Laser Physics Division, Research and Development Block-A, Centre for Advanced Technology, Indore-452 013 (M.P), India
    4 SSE Group, Tata Institute of Fundamental Research, Mumbai-400 005, India
    J. Appl. Phys. 91, 5875 (2002); http://dx.doi.org/10.1063/1.1464210
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/content/aip/journal/jap/91/9/10.1063/1.1464210
2002-04-17
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of growth temperature on strain barrier for metalorganic vapor phase epitaxy grown strained InGaAs quantum well with lattice matched InGaAsP barriers
http://aip.metastore.ingenta.com/content/aip/journal/jap/91/9/10.1063/1.1464210
10.1063/1.1464210
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