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Carbon reactivation kinetics in GaAs: Its dependence on dopant precursor, doping level, and layer thickness
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10.1063/1.1467953
/content/aip/journal/jap/91/9/10.1063/1.1467953
http://aip.metastore.ingenta.com/content/aip/journal/jap/91/9/10.1063/1.1467953
/content/aip/journal/jap/91/9/10.1063/1.1467953
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/content/aip/journal/jap/91/9/10.1063/1.1467953
2002-04-17
2014-07-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carbon reactivation kinetics in GaAs: Its dependence on dopant precursor, doping level, and layer thickness
http://aip.metastore.ingenta.com/content/aip/journal/jap/91/9/10.1063/1.1467953
10.1063/1.1467953
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