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Effects of low-temperature Si buffer layer thickness on the growth of SiGe by molecular beam epitaxy
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10.1063/1.1516842
/content/aip/journal/jap/92/11/10.1063/1.1516842
http://aip.metastore.ingenta.com/content/aip/journal/jap/92/11/10.1063/1.1516842
/content/aip/journal/jap/92/11/10.1063/1.1516842
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/content/aip/journal/jap/92/11/10.1063/1.1516842
2002-11-12
2015-03-07
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of low-temperature Si buffer layer thickness on the growth of SiGe by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/jap/92/11/10.1063/1.1516842
10.1063/1.1516842
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