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Photoluminescence study of InAs quantum dots embedded in GaNAs strain compensating layer grown by metalorganic-molecular-beam epitaxy
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10.1063/1.1516873
/content/aip/journal/jap/92/11/10.1063/1.1516873
http://aip.metastore.ingenta.com/content/aip/journal/jap/92/11/10.1063/1.1516873
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/content/aip/journal/jap/92/11/10.1063/1.1516873
2002-11-12
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence study of InAs quantum dots embedded in GaNAs strain compensating layer grown by metalorganic-molecular-beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/jap/92/11/10.1063/1.1516873
10.1063/1.1516873
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