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Erratum: “Stability of layers on Si (001) during high-temperature anneals under reduced oxygen partial pressures” [J. Appl. Phys. 92, 82 (2002)]
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3.C. M. Perkins, B. B. Triplett, P. C. McIntyre, K. C. Saraswat, and E. Sheno, Appl. Phys. Lett. 81, 1417 (2002).
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