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Erratum: “Stability of layers on Si (001) during high-temperature anneals under reduced oxygen partial pressures” [J. Appl. Phys. 92, 82 (2002)]
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1.S. Stemmer, Z. Chen, R. Keding, J.-P. Maria, D. Wicaksana, and A. I. Kingon, J. Appl. Phys. 92, 82 (2002).
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2.Thermochemical Properties of Inorganic Substances, edited by O. Knacke, O. Kubaschewski, and K. Hesselmann (Springer-Verlag, New York, 1991).
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3.C. M. Perkins, B. B. Triplett, P. C. McIntyre, K. C. Saraswat, and E. Sheno, Appl. Phys. Lett. 81, 1417 (2002).
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2002-11-12
2014-08-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Erratum: “Stability of ZrO2 layers on Si (001) during high-temperature anneals under reduced oxygen partial pressures” [J. Appl. Phys. 92, 82 (2002)]
http://aip.metastore.ingenta.com/content/aip/journal/jap/92/11/10.1063/1.1519098
10.1063/1.1519098
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