Volume 92, Issue 3, 01 August 2002
Index of content:
92(2002); http://dx.doi.org/10.1063/1.1490637View Description Hide Description
The effect of interfacial planar doping with an insulating granular layer in a sandwiched structure was studied. By inserting a thin layer at either the Co/Cu (top) or Cu/Co (bottom) interface in sandwiched Co/Cu/Co structures, the magnetoresistance curve as a function of the magnetic field changed significantly. This change was due to a reduction of interlayer coupling and to a change in the switching mechanism of the magnetizations caused by modification of the interface. In addition, the dusted Co/Cu/Co structures showed flat peaks and small switching fields that would be very useful for practical applications.
92(2002); http://dx.doi.org/10.1063/1.1491584View Description Hide Description
A metallization scheme consisting of Ti/Al/Mo/Au with excellent edge acuity has been developed for obtaining low-resistance ohmic contacts to Excellent ohmic characteristics with a specific contact resistivity as low as were obtained by rapid thermal annealing of evaporated Ti/Al/Mo/Au at 850 °C for 30 sec in a ambient. Additionally, no degradation in specific contact resistivity was observed for these contacts subjected to long-term annealing at 500 °C for 360 h.
92(2002); http://dx.doi.org/10.1063/1.1491601View Description Hide Description
Time-resolved high-energy x-ray diffractionmeasurements were used to examine laser shock-induced changes in cadmium sulfide single crystals compressed along the c axis near 1.5 and 3.5 GPa. Macroscopic compression under different loading conditions was monitored through the evolution of the (004) Bragg reflection in Laue geometry. In the low-stress experiments, the elastic response of the sample was evidenced by reversible changes of the intensity profiles, while a plastic behavior was observed in the high-stress experiments. A residual (004) reflection is observed in the rocking curve obtained from the crystal shocked to 3.5 GPa, in addition to two peaks at higher angle.
SiGe/Si resonant-cavity-enhanced photodetectors for 1.3 μm operation fabricated using wafer bonding techniques92(2002); http://dx.doi.org/10.1063/1.1492868View Description Hide Description
A SiGe/Si multiple-quantum-well resonant-cavity-enhanced (RCE) photodetector for 1.3 μm operation was fabricated using bonding reflector process. A full width at half maximum (FWHM) of 6 nm and a quantum efficiency of 4.2% at 1314 nm were obtained. Compared to our previously reported SiGe RCE photodetectors fabricated on separation-by-implanted-oxygen wafer, the mirrors in the device can be more easily fabricated and the device can be further optimized. The FWHM is expected to be less than 1 nm and the detector is fit for density wavelength division multiplexing applications.