Volume 92, Issue 5, 01 September 2002
Index of content:
Gain spectra of coupled InGaAsP/InP quantum wells measured with a segmented contact traveling wave device92(2002); http://dx.doi.org/10.1063/1.1497448View Description Hide Description
We use an adaptation of the variable stripe length method to measure the spectral gain of InGaAsP/InP laser structures with 12 coupled quantum films as active volume. The samples are prepared with a two-segment contact stripe for current injection, so the length of the electrically pumped region can be varied between two values. From the corresponding ratio of emission intensities, the gain spectra are extracted. Their analysis with respect to the dependency on the injected carrier density shows the possibility of a simple description of the gain of coupled quantum wells.
92(2002); http://dx.doi.org/10.1063/1.1499742View Description Hide Description
single crystals were grown by using a modified Bridgmann method. The optical energyband gap obtained from the optical absorptionmeasurement was about at 10 K and at 298 K. In the photoluminescence(PL)spectrameasured at temperatures below 70 K, two peaks were distinguished. One corresponds to the ground state and the other corresponds to the excited state of free exciton. The binding energy of the exciton was about 5.2 meV. The energyband gap obtained from the PLmeasurements was 1.9236 eV at 10 K.
92(2002); http://dx.doi.org/10.1063/1.1497447View Description Hide Description
We report measurements of electron drift velocities as a function of density-reduced electric field, for hexafluorobutadiene and mixtures of with Ar. The for the mixtures of with Ar can aid Boltzmann transport equation analyses aimed at calculating cross-section sets for