1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
High resolution deep level transient spectroscopy studies of the vacancy-oxygen and related defects in ion-implanted silicon
Rent:
Rent this article for
USD
10.1063/1.1497721
/content/aip/journal/jap/92/7/10.1063/1.1497721
http://aip.metastore.ingenta.com/content/aip/journal/jap/92/7/10.1063/1.1497721
/content/aip/journal/jap/92/7/10.1063/1.1497721
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/jap/92/7/10.1063/1.1497721
2002-09-18
2014-09-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High resolution deep level transient spectroscopy studies of the vacancy-oxygen and related defects in ion-implanted silicon
http://aip.metastore.ingenta.com/content/aip/journal/jap/92/7/10.1063/1.1497721
10.1063/1.1497721
SEARCH_EXPAND_ITEM