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Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface
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10.1063/1.1571962
/content/aip/journal/jap/93/11/10.1063/1.1571962
http://aip.metastore.ingenta.com/content/aip/journal/jap/93/11/10.1063/1.1571962
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/content/aip/journal/jap/93/11/10.1063/1.1571962
2003-05-19
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface
http://aip.metastore.ingenta.com/content/aip/journal/jap/93/11/10.1063/1.1571962
10.1063/1.1571962
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