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Single to polycrystalline transition in silicon growth by ion-assisted deposition at low temperatures
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10.1063/1.1542657
/content/aip/journal/jap/93/5/10.1063/1.1542657
http://aip.metastore.ingenta.com/content/aip/journal/jap/93/5/10.1063/1.1542657
/content/aip/journal/jap/93/5/10.1063/1.1542657
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/content/aip/journal/jap/93/5/10.1063/1.1542657
2003-03-04
2014-08-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Single to polycrystalline transition in silicon growth by ion-assisted deposition at low temperatures
http://aip.metastore.ingenta.com/content/aip/journal/jap/93/5/10.1063/1.1542657
10.1063/1.1542657
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