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Study of the electrical activation of -implanted InGaAs by means of Raman scattering
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10.1063/1.1542659
/content/aip/journal/jap/93/5/10.1063/1.1542659
http://aip.metastore.ingenta.com/content/aip/journal/jap/93/5/10.1063/1.1542659
/content/aip/journal/jap/93/5/10.1063/1.1542659
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/content/aip/journal/jap/93/5/10.1063/1.1542659
2003-03-04
2014-08-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study of the electrical activation of Si+-implanted InGaAs by means of Raman scattering
http://aip.metastore.ingenta.com/content/aip/journal/jap/93/5/10.1063/1.1542659
10.1063/1.1542659
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