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Wave-mechanical calculations of leakage current through stacked dielectrics for nanotransistor metal-oxide-semiconductor design
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10.1063/1.1544650
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    Affiliations:
    1 Laboratoire Electronique Microtechnologie Instrumentation (LEMI), UPRES-EA 2654, Université de Rouen, Rue Lavoisier, 76821 Mont-Saint-Aignan Cedex, France
    2 Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, Département Hyperfréquences et Semiconducteurs, Université des Sciences et Technologies de Lille, Avenue Poincaré, BP 69, F-59652 Villeneuve d’Ascq Cedex, France
    J. Appl. Phys. 93, 2966 (2003); http://dx.doi.org/10.1063/1.1544650
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/content/aip/journal/jap/93/5/10.1063/1.1544650
2003-03-04
2014-08-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Wave-mechanical calculations of leakage current through stacked dielectrics for nanotransistor metal-oxide-semiconductor design
http://aip.metastore.ingenta.com/content/aip/journal/jap/93/5/10.1063/1.1544650
10.1063/1.1544650
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